Skip to article frontmatterSkip to article content

02 Negative Temperature Coefficient

Aim

To show how the resistance of a semiconductor (P-Ge) depends on temperature.

Subjects

Diagram

.

Figure 1:.

Equipment

Presentation

Set the Ammeter at a 1 A1\mathrm{~A}-scale. The voltage of the power supply is raised until a current of about 0.05 A0.05\mathrm{~A} flows in the circuit. The bar of PGe\mathrm{P}-\mathrm{Ge} is heated by the gas flame and soon the current rises to a much higher value. After a short time of heating the gas flame can be removed and the current continues to rise, faster and faster, only limited by the power supply.

Explanation

The resistance of a semiconductor drops with temperature because at a higher temperature there are more free charge-carriers in it.

The current flowing in the material heats it up: Pel=V2RP_{e l}=\frac{V^{2}}{R} The heat leaving the piece of material is proportional to ΔT:Pout ΔT\Delta T: P_{\text {out }} \propto \Delta T (Newton cooling). When Pout =PelP_{\text {out }}=P_{e l} there will be thermal equilibrium and the temperature is constant. Reaching such an equilibrium takes some time.

In this demonstration RR lowers due to a rise in temperature and so PelP_{e l}, rises due to a rise in temperature. When this rise is faster than the rise of Pout P_{\text {out }} an ever faster rising of ΔT\Delta T (like an avalanche) will result.